Electronic and optical properties of (GaN)(n)/(AlN)(n) (001) superlattices

Citation
Kh. Li et al., Electronic and optical properties of (GaN)(n)/(AlN)(n) (001) superlattices, CHIN PHYS L, 16(6), 1999, pp. 437-439
Citations number
11
Categorie Soggetti
Physics
Journal title
CHINESE PHYSICS LETTERS
ISSN journal
0256307X → ACNP
Volume
16
Issue
6
Year of publication
1999
Pages
437 - 439
Database
ISI
SICI code
0256-307X(1999)16:6<437:EAOPO(>2.0.ZU;2-6
Abstract
The band structure of the short period zinc-blende (GaN)(n)/(AIN)(n) (001) superlattices has been calculated by means of semi-empirical tight-binding sp(3) s* method. The superlattices energy gap dependence on layer number n is given out. On the basis of the calculated eigenfunctions and eigenvalues of the superlattices (SL), the imaginary parts of the dielectric function epsilon(2)(omega) of (GaN)(n)/(AIN)(n) (001) superlattices were obtained. I n order to compare with the optical properties of bulk zinc-blende GaN and AIN, we also calculated epsilon(2)(omega) of the two compounds. It is shown that there are some discernible effects due to confinement and superlattic e periodicity.