Modifications and characterization of a silicon-based microelectrode array

Citation
G. Buss et al., Modifications and characterization of a silicon-based microelectrode array, ELECTR ACT, 44(21-22), 1999, pp. 3899-3910
Citations number
36
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHIMICA ACTA
ISSN journal
00134686 → ACNP
Volume
44
Issue
21-22
Year of publication
1999
Pages
3899 - 3910
Database
ISI
SICI code
0013-4686(1999)44:21-22<3899:MACOAS>2.0.ZU;2-K
Abstract
A silicon-based microelectrode array for a wide variety of applications has been developed, This microelectrode array represents a well-suited alterna tive to current methods of chemical analysis and is useful in order to stud y and optimize effects such as material corrosion, etching processes and di fferent passivation layers. Microelectrodes with a high aspect ratio for sp ace-resolved measurements and an integrated energy supply could be realized by galvanic deposition. The used passivation layers were characterized by scanning electron microscopy (SEM), optical microscopy and small area X-ray photoelectron spectroscopy (XPS). The electrodes have been investigated by SEM, cyclic voltammetry and laser profilometry. (C) 1999 Elsevier Science Ltd. All rights reserved.