Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant

Authors
Yang, X Jurkovic, MJ Heroux, JB Wang, WI
Citation
X. Yang et al., Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant, ELECTR LETT, 35(13), 1999, pp. 1082-1083
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
13
Year of publication
1999
Pages
1082 - 1083
Database
ISI
SICI code
0013-5194(19990624)35:13<1082:LTISQW>2.0.ZU;2-6
Abstract
Long wavelength InGaAsN/GaAs single quantum well (SQW) laser diodes have be en grown by solid source molecular beam epitaxy (MBE) using Sb as a surfact ant. A record low threshold current density of 1.47kA/cm(2) and a quantum e fficiency of 0.11W/A are reported for broad area laser diodes (LDs) operati ng at a wavelength of 1.275 mu m under pulsed operation at room temperature .