Low noise, high efficiency L-band EDFA with 980nm pumping

Citation
Hs. Chung et al., Low noise, high efficiency L-band EDFA with 980nm pumping, ELECTR LETT, 35(13), 1999, pp. 1099-1100
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
13
Year of publication
1999
Pages
1099 - 1100
Database
ISI
SICI code
0013-5194(19990624)35:13<1099:LNHELE>2.0.ZU;2-5
Abstract
Low noise figures of 3.3-3.9dB have been acheived in flat gain L-band EDFAs over 30nm with < 1dB gain variation. A dual-stage configuration with optim ised use of backward amplified spontaneous emission is employed for low noi se and high efficiency operation with only 980nm pumping.