Demonstration of efficient p-type doping in AlxGa1-xN/GaN superlattice structures

Enhanced acceptor activation, reduced acceptor binding energy and enhanced conductivity are demonstrated in AlxGa1-xN/GaN doped superlattice structure s. An acceptor activation energy of 58meV is demonstrated in an Al0.20Ga0.8 0N/GaN superlattice structure with a period of 200 Angstrom. This value is significantly lower than the 200meV activation energy measured in bulk GaN. The dependence of activation energy on the Al content of the superlattice is consistent with that predicted by the theoretical model. The demonstrati on of improved p-type doping characteristics in GaN is expected to enable t he realisation of electronic and optoelectronic devices with improved prope rties.