Improved programming performance of EEPROM/flash cell using post-poly-Si gate N2O annealing

Authors
Huang, KC Fang, YK Yaung, DN Kuo, DS Wang, CS Liang, MS
Citation
Kc. Huang et al., Improved programming performance of EEPROM/flash cell using post-poly-Si gate N2O annealing, ELECTR LETT, 35(13), 1999, pp. 1112-1114
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
13
Year of publication
1999
Pages
1112 - 1114
Database
ISI
SICI code
0013-5194(19990624)35:13<1112:IPPOEC>2.0.ZU;2-7
Abstract
The effect of post poly-Si N2O annealing on the programming performance and reliability of split-gate source-side-injection EEPROM/flash memory cells has been investigated. It is found that by employing post-poly-Si gate N2O- annealing, the programming efficiency and the immunity to program disturban ces can be significantly improved.