Optical characteristics of 1.24-mu m InAs quantum-dot laser diodes

Authors
Lester, LF Stintz, A Li, H Newell, TC Pease, EA Fuchs, BA Malloy, KJ
Citation
Lf. Lester et al., Optical characteristics of 1.24-mu m InAs quantum-dot laser diodes, IEEE PHOTON, 11(8), 1999, pp. 931-933
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
11
Issue
8
Year of publication
1999
Pages
931 - 933
Database
ISI
SICI code
1041-1135(199908)11:8<931:OCO1MI>2.0.ZU;2-G
Abstract
The optical characteristics of the first laser diodes fabricated from a sin gle-InAs quantum-dot layer placed inside a strained InGaAs QW are described . The saturated modal gain for this novel laser active region is found to b e 9-10 cm(-1) in the ground state. Room temperature threshold current densi ties as low as 83 A/cm(2) for uncoated 1.24-mu m devices are measured, and operating wavelengths over a 190-nm span are demonstrated.