1.3-mu m AlGaInAs buried-heterostructure lasers

1.3-mu m AlGaInAs-InP strained multiple-quantum-well (MQW) buried-heterostr ucture (BH) lasers have been successfully fabricated, InP current blocking layers could be smoothly regrown using the simple KF pretreatment, although the etched active region includes Al-containing layers. The threshold curr ent I-th was typically 11 mA for as-cleaved 350-mu m-long devices, which is about 30% lower than that of the ridge laser counterparts. A maximum conti nuous-wave operating temperature as high as 155 degrees C was achieved. For the 200-mu m-long device with the high-reflective-coated rear-facet, I-th was as low as 7.5 mA and characteristic temperature T-O was 80 K, The BH la sers also provided more circular far-field patterns and lower thermal resis tances than the ridge lasers.