11.5-W CW 1.83-mu m diode laser array

We demonstrate high-power operation of both individual broad-waveguide sepa rate-confinement-heterostructure quantum-well InGaAsP-InP laser diodes and 1-cm-wide arrays emitting at 1.83 mu m. Despite strong dependence of thresh old current density and diode efficiency on operating temperature, a contin uous-wave output power of 2.1 W has been obtained for 100-mu m-aperture las ers with 2-mm-long cavities, An output power of 11.5 W was reached for ten element 1-cm-wide array at a heatsink temperature of 16 degrees C.