In this paper, we describe a newly developed design method of high-Q microw
ave oscillator circuits leading to the minimum phase noise for a given tran
sistor and resonator. The key point of the method is the maximization of th
e energy stored in the resonator and its transfer to the controlling input
voltage port of the transistor. The proposed method has been applied to two
experimental oscillators setups with pseudomorphic high electron-mobility
transistors. A state-of-the-art phase noise of -50 dBc @ 10-Hz offset from
carrier with a 1/f(3) slope has been measured at room temperature with a 9.
2-GHz oscillator. The efficiency of this design method and its ease of use
represent, in our opinion, a real breakthrough in the field of low-noise tr
ansistor oscillator circuit design.