Growth and characterisation of CIS solar cells

Copper indium selenide (CIS) thin film solar cells can be prepared by elect rodeposition, dip coating and flash annealing at 400 degrees C. In this pay er the author has reported a single step electrodeposition process for the growth of CIS thin film on molybdenum substrate. The as deposited films are preferably oriented along 112 direction and have low resistivity which is further reduced by annealing in air. The cadmium sulphide (CdS) thin film c an be prepared by dip coating technique on glass, molybdenum and CIS thin f ilm substrates. The as deposited films are preferably oriented along 002 di rection. The open circuit voltage V-oc and short circuit current density J( sc) are similar to 100 mV and similar to 5 mA/cm(2) respectively. The resul ts are preliminary in nature and by optimising the growth conditions Furthe r improvement in result is expected.