N. Bouarissa et H. Aourag, Effective masses of electrons and heavy holes in InAs, InSb, GaSb, GaAs and some of their ternary compounds, INFR PHYS T, 40(4), 1999, pp. 343-349
A survey is carried out for both electron and heavy-hole effective masses i
n InAs, InSb, GaAs, GaSb and some of their ternary compounds. Our computati
ons are based on the pseudopotential method. To make allowance for the chem
ical disorder, the virtual crystal approximation is used, including a corre
ction to the alloy potential. The agreement between our theoretical results
and the experiment is very satisfying. A non-linearity dependence of the e
lectron effective mass on the molar fraction has been shown for the ternary
alloys under consideration, which indicates the alloying effect. This non-
linearity disappears in the case of the heavy-hole effective mass for GaInS
b. (C) 1999 Elsevier Science B.V. All rights reserved.