Nucleation of diamond on non-diamond virgin substrates is characterized by
low nucleation densities and long incubation times. Various methods have be
en developed to enhance nucleation densities and reduce the duration of inc
ubation. This report describes a number of different but related studies of
diamond nucleation on silicon and chemically modified silicon surfaces. Th
e effect on the initial stages of deposition of mechanical abrasion with sl
urries and in-situ sample biasing are especially discussed.
Substrate abrasion with diamond results in the embeddying of diamond debris
into its surface. Destructive ion implantation into this diamond debris is
found to prevent subsequent diamond growth, therefore leading to the concl
usion that the diamond debris serves as growth centers. Abrasion of the sub
strate with mixed metal/diamond slurries is reported to further enhance nuc
leation relative solely to diamond abrasion. It is suggested that during th
e chemical vapor deposition (CVD) process some metals alter the composition
of the gas phase above the growing surface. Also, the role of surface reac
tions is emphasized.
We also introduce the de-glow discharge process as a novel, in situ surface
pretreatment method for the formation of a precursor for diamond nucleatio
n. Our results show that the promotion of diamond growth by this method is
primarily due to formation of nano-size diamond particles during the pretre
atment process. It is suggested that, to some extent, graphitic carbon with
a high degree of defects may serve as a diamond nucleation center as well.