Annealing effect of ZnSe : N/ZnSe grown by metalorganic chemical vapor deposition

High-quality nitrogen-doped ZnSe (ZnSe:N) epitaxial layers were grown on Zn Se substrates in a low-pressure metalorganic chemical vapor deposition (MOC VD) system under optimum growth conditions using hydrogen as a carrier gas and ammonia as a dopant source. In order to enhance the activation efficien cy of nitrogen in ZnSe epitaxial layers, ZnSe:N/ZnSe was annealed in melted zinc using the rapid thermal annealing technique. The dependence of net ac ceptor concentration on annealing duration, VI/II nux ratio, and ammonia Bu r was examined. The highest net acceptor concentration value calculated fro m capacitance voltage (C-V) measurements reached 2 x 10(17) cm(-3). This is the highest value obtained so far for ZnSe homosystem epitaxial layers gro wn by the MOCVD method.