Deep levels in Hg0.766Cd0.234Te grown by metal-organic chemical vapor deposition

The deep levels in Hg0.766Cd0.234Te grown on Si substrates by metal-organic chemical vapor deposition (MOCVD) have been studied. Spectral analysis of deep level transient spectroscopy (SADLTS) was used to evaluate the deep le vels for this device. Three levels (L-M1, L-M2 and L-M3) were confirmed in this device. The values of activation energy and capture cross section for these levels were as follows: L-M1 (21 meV, 6.1 x 10(-18) cm(-2)); L-M2 (21 meV, 1.3 x 10(-18) cm(-2)) and L-M3 (35 meV, 9.8 x 10(-18) cm(-2)). The mi dgap level in p-HgCdTe reported by several authors could not be confirmed i n this work.