Total cross section of electron stimulated desorption of hydrogen from hydrogen-terminated Ge/Si(001) as observed by time of flight elastic recoil detection analysis

We have performed time of flight elastic recoil detection analysis (TOF-ERD A) measurements to investigate the hydrogen desorption cross section of ele ctron stimulated desorption (ESD) from a hydrogen-terminated Ge/Si(001) sur face. These results showed that TOF-ERDA measurement was valid for quantita tive analysis of surface hydrogen The desorption cross sections were determ ined for incident electron energy ranges of 35-200 eV. It was found that th e threshold electron energy of ESD was about 30 eV. The desorption cross se ctions indicated the dependence of irradiated electron energy. This meant t hat the ESD mechanism was related to the core band excitation.