Strain relief by surface undulations of dislocation free MBE grown antimonides on compliant universal GaAs substrates

Authors
Seaford, ML Hesse, PJ Tomich, DH Eyink, KG
Citation
Ml. Seaford et al., Strain relief by surface undulations of dislocation free MBE grown antimonides on compliant universal GaAs substrates, J ELEC MAT, 28(7), 1999, pp. 878-880
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
28
Issue
7
Year of publication
1999
Pages
878 - 880
Database
ISI
SICI code
0361-5235(199907)28:7<878:SRBSUO>2.0.ZU;2-B
Abstract
Using solid source molecular beam epitaxy (MBE) of gallium antimonide (GaSb ) and indium antimonide (InSb), we have demonstrated(1) the ability to grow dislocation free lattice mismatched materials on gallium arsenide (GaAs) s ubstrates formed by a twist bonding process. Lo et al.(2) proposed that it would be possible to create a compliant universal substrate capable of allo wing the epitaxial growth of lattice mismatched materials without dislocati ons.