W. Tamura et al., Electroluminescence properties of PbTe pn junctions fabricated under controlled Te vapor pressures, J ELEC MAT, 28(7), 1999, pp. 907-911
Electroluminescence properties of PbTe pn junctions grown under various tel
lurium vapor pressures are investigated. For unintentionally doped pn junct
ions, the luminescence bands corresponding to D-A pair and band to band tra
nsition are observed. The luminescence intensity of the band to band transi
tion has depended on tellurium vapor pressure, which suggests nonradiative
transitions through nonstoichiometric defects forming deep levels. For pn j
unctions with Bi-doped epitaxial layers, only one peak appears at 20 simila
r to 25 meV below band to band-transition energy, which, probably, shows re
combination through impurity levels or impurity band originating from Bi-do
ping.