Oxygen incorporation in AlInP, and its effect on p-type doping with magnesium

Citation
Sa. Stockman et al., Oxygen incorporation in AlInP, and its effect on p-type doping with magnesium, J ELEC MAT, 28(7), 1999, pp. 916-925
Citations number
36
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
28
Issue
7
Year of publication
1999
Pages
916 - 925
Database
ISI
SICI code
0361-5235(199907)28:7<916:OIIAAI>2.0.ZU;2-Z
Abstract
Oxygen incorporation in AlyIn1-yP (y similar to 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH, flo w, growth temperature, and alloy composition. Both O-2 and diethylaluminum ethoxide (DEAlO) were employed as sources of oxygen. The incorporation of o xygen was found to be a superlinear function of O-2 or DEAlO flow. When mul tiple sources of oxygen are present, a surface interaction leads to enhance d oxygen incorporation. Oxygen incorporation cannot be adequately described by a simple dependence on growth temperature or V/III ratio due to strong interactions between these variables. In Mg-doped AlInP co-doped with oxyge n, the incorporation of both Mg and O is strongly affected by an interactio n between the two species, and roughly 10% of the oxygen atoms act as compe nsating donors.