The diffusion pathways along the trough and between the trough and the dime
r row on the Si(100) surface are investigated by tight-binding molecular dy
namics calculations using the environment-dependent tight-binding silicon p
otential and by ab initio calculations using the Car-Parrinello method. The
studies discover new diffusion pathways consisting of rotation of addimer.
The calculated energy barriers are in excellent agreement with experiment.
The rotaional diffusion pathway between the trough and the dimer row is mu
ch pathways by parallel and perpendicular addimer. as the energy barrier of
the diffusion pathway by more energetically favorable than other diffusion
The new pathway along the trough is nearly same dissociation of the addime
r.