Structure and properties of carbon nitride films deposited by magnetron sputtering

Citation
Wt. Zheng et al., Structure and properties of carbon nitride films deposited by magnetron sputtering, MATER CH PH, 60(2), 1999, pp. 163-167
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS CHEMISTRY AND PHYSICS
ISSN journal
02540584 → ACNP
Volume
60
Issue
2
Year of publication
1999
Pages
163 - 167
Database
ISI
SICI code
0254-0584(19990816)60:2<163:SAPOCN>2.0.ZU;2-V
Abstract
Carbon nitride films are deposited using de magnetron sputtering in N-2 dis charge. The structure, electrical resistance, optical band gap, and mechani cal properties of the films are characterized. Cls near edge X-ray absorpti on fine structure (NEXAFS) spectra show that the intensity of pi* resonance is the lowest for the film grown at substrate temperature (T-s) of 350 deg rees C. Both electrical resistance and optical band gap decrease with a ris e in T-s, while the hardness for the carbon nitride films has its maximum a t T-s = 350 degrees C. The correlation between the structure and properties of the films is discussed. (C) 1999 Elsevier Science S.A. All rights reser ved.