Photoelectrochemical cells based on chemically deposited nanocrystalline Bi2S3 thin films

Nanocrystalline bismuth sulphide (Bi2S3) thin films of various thicknesses having grain size between 7 and 34 nm have been prepared by using chemical bath deposition method onto fluorine doped tin oxide (FTO) coated glass sub strates (sheet resistance 20-30 Ohm cm(2)) from an aqueous acidic bath (pH = 5). Bismuth nitrate: and thioacetamide were used as Bi3+ and S2- ion sour ces, respectively. Films were prepared at the bath temperature of 6 degrees C. The Bi2S3/polysulphide junction cells were fabricated and their photoel ectrochemical performance was studied. The grain size and thickness of Bi2S 3 films were found to cause significant changes in the photoelectrochemical cell performance. (C) 1999 Elsevier Science S.A. All rights reserved.