This paper is concerned with the preliminary results of a technological stu
dy aimed at the development of a fabrication process for double-sided AC-co
upled silicon microstrip detectors. The approach adopted for the fabricatio
n of both single-sided and double-sided detectors is presented, and the res
ults from electrical tests performed on detectors and test structures are r
eported and discussed. Good electrical characteristics as well as an accept
able number of process-related defects have been obtained for these prototy
pe detectors, thus demonstrating the feasibility of fabricating such device
s at the IRST facility. (C) 1999 Elsevier Science B.V. All rights reserved.