Determination of hydrogen in 6H-SiC epitaxial layers by the N-15 nuclear reaction analysis technique

Citation
J. Portmann et al., Determination of hydrogen in 6H-SiC epitaxial layers by the N-15 nuclear reaction analysis technique, NUCL INST B, 155(1-2), 1999, pp. 132-136
Citations number
18
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
155
Issue
1-2
Year of publication
1999
Pages
132 - 136
Database
ISI
SICI code
0168-583X(199907)155:1-2<132:DOHI6E>2.0.ZU;2-O
Abstract
By using the N-15 nuclear reaction analysis (NRA) technique, the hydrogen c oncentrations in 6H-SiC epilayers were determined and compared with the res ults of infrared (IR) absorption measurements. Both methods found similar h ydrogen concentration. The hydrogen depth profile measured by the NRA techn ique is shown. The NRA spectra show hydrogen concentrations that remain con stant for depths larger than 150 nm. The measured bulk concentrations for t he two SiC epilayers are 1.4x10(20) and 2.5x10(20) hydrogen atoms/cm(3). (C ) 1999 Elsevier Science B.V. All rights reserved.