The use of XR-100CR Si-PIN detector for PIXE measurements is examined. The
relative efficiency was calculated using the Cu- and GaAs-PIXE spectra prod
uced by target bombardment with 1.8 MeV He+ followed by a nonlinear fit pro
cedure of the experimental spectra to a detector model. The main feature of
this detector model is the presence of a relatively thick Si dead layer in
front of the detector. (C) 1999 Elsevier Science B.V. All rights reserved.