Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs

Authors
Gebauer, J Lausmann, M Staab, TEM Krause-Rehberg, R Hakala, M Puska, MJ
Citation
J. Gebauer et al., Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs, PHYS REV B, 60(3), 1999, pp. 1464-1467
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
3
Year of publication
1999
Pages
1464 - 1467
Database
ISI
SICI code
0163-1829(19990715)60:3<1464:MIONDG>2.0.ZU;2-K
Abstract
Native vacancies in Te-doped (5x10(16)-5x10(18) cm(-3)) GaAs were investiga ted by means of position lifetime and Doppler-broadening coincidence spectr oscopy. The experimental data were related to theoretical calculations of t he positron lifetime and the annihilation momentum distribution. Monovacanc ies were observed in all Te-doped GaAs samples under study. It will be show n that they can directly be identified to be Ga-vacancy-Te-As-donor complex es. These complexes are the dominating type of vacancy defects in the dopin g range under observation. [S0163-1829(99)07327-0].