Hydrogen-atom number in platinum-hydrogen complexes in silicon

Citation
Ju. Sachse et al., Hydrogen-atom number in platinum-hydrogen complexes in silicon, PHYS REV B, 60(3), 1999, pp. 1474-1476
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
3
Year of publication
1999
Pages
1474 - 1476
Database
ISI
SICI code
0163-1829(19990715)60:3<1474:HNIPCI>2.0.ZU;2-2
Abstract
Four different platinum-hydrogen complexes are identified in silicon by tra nsient capacitance spectroscopy. From deep-level depth profiling, we are ab le to identify the number of hydrogen atoms in the defect complexes. Three of the platinum-hydrogen complexes are electrically active, and contain one , two, and three hydrogen atoms, respectively. A Complete electrical passiv ation of substitutional Pt is achieved by at least four hydrogen atoms. Our results are in agreement with experimental data on a Pt-H-2 complex and a theoretical study on the structure and level positions of these defect comp lexes. [S0163-1829(99)04328-3].