M. Hartig et al., Density dependence of carrier-carrier-induced intersubband scattering in GaAs/AlxGa1-xAs quantum wells, PHYS REV B, 60(3), 1999, pp. 1500-1503
Photoluminescence lifetimes of the n = 2 level in a large quantum well show
a clear nonmonotonic dependence on the density of optically generated carr
iers. Varying the power density over five orders of magnitude we prove dire
ctly the high efficiency of carrier-carrier interaction for intersubband sc
attering when longitudinal-optical phonon emission is suppressed. For low d
ensities, the observed n = 2 decay times get shorter (from 40 down to 5 ps)
as the density is increased. At high densities Pauli blocking reduces sign
ificantly the intersubband scattering rates. [S0163-1829(99)06124-X].