Coulomb gap in a doped semiconductor near the metal-insulator transition: Tunneling experiment and scaling ansatz

Electron tunneling experiments are used to probe Coulomb correlation effect s in the single-particle density of states (DOS) of boron-doped silicon cry stals near the critical density n(c) of the metal-insulator transition (MIT ). At low energies (epsilon less than or equal to 0.5 meV), a DOS measureme nt distinguishes between insulating and metallic samples with densities 10 to 15 % on either side of n(c). However, at higher energies (similar to 1 m eV less than or equal to epsilon less than or equal to 50 meV) the DOS of b oth insulators and metals show a common behavior, increasing with energy as epsilon(m) where Nz is roughly 0.5. The observed characteristics of the DO S can be understood using a classical treatment of Coulomb interactions com bined with a phenomenogical scaling ansatz to describe the lenght-scale dep endence of the dielectric constant as the MIT is approached from the insula ting side.