Doped conducting-polymer-semiconducting-polymer interfaces: Their use in organic photovoltaic devices

Citation
Ac. Arias et al., Doped conducting-polymer-semiconducting-polymer interfaces: Their use in organic photovoltaic devices, PHYS REV B, 60(3), 1999, pp. 1854-1860
Citations number
32
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
3
Year of publication
1999
Pages
1854 - 1860
Database
ISI
SICI code
0163-1829(19990715)60:3<1854:DCITUI>2.0.ZU;2-B
Abstract
We report a study of the interface between poly(p-phenylene vinylene) (PPV) and poly(ethylene dioxythiophene) doped with polystyrene sulfonic acid (PE DOT:PSS). We find from measurements of optical absorption and conductivity that PSS dopes PPV during the sample preparation. Tn addition, the photolum inescence efficiency of PPV is strongly affected by the presence of PSS whi ch we attribute to the effect of chemical doping. We further studied the in teraction between PSS and PPV by measurements of the photovoltaic response, spectrally resolved, of a number of diode structures. By forming the inter face between a layer of PEDOT:PSS and a layer of PPV precursor prior to the thermal conversion we obtained an interpenetrating interface with large su rface area between the photoresponsive and the charge collecting polymers. For devices made with PEDOT:PSS as top electrode and aluminum as the bottom electrode the short-circuit external quantum efficiency is 4%. [S0163-1829 (99)11327-4].