Photoemission study of C-60/Si(111) adsorption as a function of coverage and annealing temperature

We report core-level and valence-band (VB) photoemission data of C-60 molec ules adsorbed at room temperature (RT) on Si(111). The measurements have be en carried out as a function of C-60 coverage [from 0.20 monolayer (ML) up to 2.2 ML] and annealing temperature (from RT up to 1300 K). From the VB sp ectra no increasing of the Fermi-level photoemission intensity has been obs erved for all the coverages investigated thereby indicating that no charge transfer occurs at the interface. Remarkable changes take place on the 1-ML spectrum as the annealing temperature is increased up to the disruption of the C-60 cages and the following formation of SiC. [S0163-1829(99)02623-5] .