Preparation of Cu-In-Se precursor thin films by electrodeposition for the production of solar cells

Authors
Citation
Am. Fernandez, Preparation of Cu-In-Se precursor thin films by electrodeposition for the production of solar cells, REV MEX FIS, 45, 1999, pp. 58-60
Citations number
6
Categorie Soggetti
Physics
Journal title
REVISTA MEXICANA DE FISICA
ISSN journal
0035001X → ACNP
Volume
45
Year of publication
1999
Supplement
1
Pages
58 - 60
Database
ISI
SICI code
0035-001X(199906)45:<58:POCPTF>2.0.ZU;2-#
Abstract
Thin films of chalcogenide compounds are promising because they have excell ent optoelectronic characteristics to be applied in solar cells. In particu lar, CuInSe2 and CdTe thin Alms have shown high solar to electrical convers ion efficiency. However, this efficiency is limited by the method of prepar ation, in this case, physical vapor deposition techniques are used. In orde r to increase the area of deposition t is necessary to use chemical methods , for example, electrodeposition technique. In this paper, the preparation of Cu-In-Se precursors thin films by electrochemical method is reported. Th ese precursors were used to build solar cells with 7.9% of efficiency.