Thin films of chalcogenide compounds are promising because they have excell
ent optoelectronic characteristics to be applied in solar cells. In particu
lar, CuInSe2 and CdTe thin Alms have shown high solar to electrical convers
ion efficiency. However, this efficiency is limited by the method of prepar
ation, in this case, physical vapor deposition techniques are used. In orde
r to increase the area of deposition t is necessary to use chemical methods
, for example, electrodeposition technique. In this paper, the preparation
of Cu-In-Se precursors thin films by electrochemical method is reported. Th
ese precursors were used to build solar cells with 7.9% of efficiency.