Local atomic structure of deep level centers in doped II-VI semiconductors

Citation
Fj. Espinosa et al., Local atomic structure of deep level centers in doped II-VI semiconductors, REV MEX FIS, 45, 1999, pp. 167-170
Citations number
15
Categorie Soggetti
Physics
Journal title
REVISTA MEXICANA DE FISICA
ISSN journal
0035001X → ACNP
Volume
45
Year of publication
1999
Supplement
1
Pages
167 - 170
Database
ISI
SICI code
0035-001X(199906)45:<167:LASODL>2.0.ZU;2-W
Abstract
Theoretical models of the local atomic structure of deep level centers prod uced by doping of II-VI semiconductors are reviewed. X-ray absorption spect roscopy (XAS) measurements on zinc-selenide doped with chlorine are present ed. From the changes observed in the spectra with increasing chlorine conce ntrations, the existence of lattice distortions around the dopant sites is inferred. The relation of such lattice distortions with the proposed theore tical models is discussed.