Atomistic simulation of defects and ion migration in LaYO3

Citation
E. Ruiz-trejo et al., Atomistic simulation of defects and ion migration in LaYO3, SOL ST ION, 123(1-4), 1999, pp. 121-129
Citations number
38
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE IONICS
ISSN journal
01672738 → ACNP
Volume
123
Issue
1-4
Year of publication
1999
Pages
121 - 129
Database
ISI
SICI code
0167-2738(199908)123:1-4<121:ASODAI>2.0.ZU;2-R
Abstract
Atomistic simulation techniques have been used to investigate the energetic s of defects, oxygen migration and proton incorporation in the high tempera ture proton conductor LaYO3. The interatomic potentials have reproduced the observed unit cell parameters. Defect calculations indicate that Schottky- type defects have unfavourable energies of formation. The calculation of th e energies of solution for alkaline-earth dopants revealed that Sr has the highest solubility in accord with experiment. It was estimated that oxygen migration takes place via a curved route with an activation energy of 1.22 eV. The enthalpies for the incorporation of water into alkaline earth doped LaYO3 were also calculated. (C) 1999 Elsevier Science B.V. All rights rese rved.