Gold-induced faceting on an Si(hhm) surface (m/h=1.4-1.5) studied by spot profile analyzing low-energy electron diffraction

Authors
Minoda, H Shimakura, T Yagi, K Heringdorf, FJM von Hoegen, MH
Citation
H. Minoda et al., Gold-induced faceting on an Si(hhm) surface (m/h=1.4-1.5) studied by spot profile analyzing low-energy electron diffraction, SURF SCI, 432(1-2), 1999, pp. 69-80
Citations number
20
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
432
Issue
1-2
Year of publication
1999
Pages
69 - 80
Database
ISI
SICI code
0039-6028(19990709)432:1-2<69:GFOASS>2.0.ZU;2-B
Abstract
Au-induced faceting on an Si(hhm) surface (m/h = 1.4-1.5) was studied by in situ high-resolution low energy electron diffraction at 750 degrees C and 800 degrees C. Au adsorption modifies surface morphology and (557), (556), (335), (5511), (113), (225) and (111) facets were formed at 750 degrees C. The facet orientation depends on Au coverage and temperature and changes of the surface free energy due to the change of Au coverage trigger the trans formation of the initial Si(hhm) surface into the hill-and-valley structure s. (C) 1999 Elsevier Science B.V. All rights reserved.