Theoretical study of the Cl-passivated Si(111) surface

Citation
A. Ricca et Cb. Musgrave, Theoretical study of the Cl-passivated Si(111) surface, SURF SCI, 430(1-3), 1999, pp. 116-125
Citations number
29
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
430
Issue
1-3
Year of publication
1999
Pages
116 - 125
Database
ISI
SICI code
0039-6028(19990621)430:1-3<116:TSOTCS>2.0.ZU;2-J
Abstract
The Cl-passivated Si(111) surface is studied using density functional theor y, in conjunction with the B3LYP functional and the cluster model. We compu te the Si-Cl frequency and the Si-Cl bond energy for R3SiCl, and the abstra ction barrier for the reaction R3SiCl + H --> R3Si + HCl using the B3LYP ap proach. We calibrate the B3LYP bond energy and the abstraction barriers usi ng the values obtained using the G2MP2, G2 and CCSD(T) approaches. Our comp uted B3LYP Si-Cl frequency of 555 cm(-1) is in good agreement with the expe rimental value of 588 cm(-1). The shift in the Si-Cl frequency as surface c hlorine is added to the cluster agrees with experimental observations. (C) 1999 Elsevier Science B.V. All rights reserved.