Stacking transformation and defect creation in Cs intercalated TiS2 singlecrystals

Citation
M. Remskar et al., Stacking transformation and defect creation in Cs intercalated TiS2 singlecrystals, SURF SCI, 430(1-3), 1999, pp. 199-205
Citations number
30
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
430
Issue
1-3
Year of publication
1999
Pages
199 - 205
Database
ISI
SICI code
0039-6028(19990621)430:1-3<199:STADCI>2.0.ZU;2-8
Abstract
The intercalation of TiS2 single crystals with Cs was studied by transmissi on electron microscopy. Evidence was found for an intercalation induced 1T- ->3R structure transformation. The Cs+ ions formed an a root 3 x a root 3 s tructure. In the thinnest parts of the crystals, the intercalation induced cracks and moire fringes. In thicker parts the 1T-->3R transformation was f rustrated, with formation of intercalation ribbons and dislocation loops. A ir exposure resulted in de-intercalation and oxidation of Cs. The results e mphasise the connections between defects and intercalation. (C) 1999 Elsevi er Science B.V. All rights reserved.