Effect of dopant on the uniformity of InAs self-organized quantum dots

Low-temperature photoluminescence studies have been performed on Si-doped a nd Be-doped self-organized InAs/GaAs quantum dot (QD) samples to investigat e the effect of doping. When Si or Be is doped into the sample, a remarkabl e decrease in line-width is observed. We relate this phenomenon to a model that takes the Si or Be atoms as the nucleation centers for the formation o f QDs. When Si or Be is doped, more small uniform quantum dots are formed. The result will be of significance for the application of self-organized In As quantum dots in semiconductor devices.