Effect of polyvinylcarbazole barrier layer on charge storage in amorphous selenium films

Citation
S. Chand et al., Effect of polyvinylcarbazole barrier layer on charge storage in amorphous selenium films, APPL PHYS L, 75(5), 1999, pp. 621-623
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
5
Year of publication
1999
Pages
621 - 623
Database
ISI
SICI code
0003-6951(19990802)75:5<621:EOPBLO>2.0.ZU;2-8
Abstract
Effect of polyvinylcarbazole (PVK) barrier layer on charge storage in amorp hous selenium (a-Se) films (similar to 100 mu m) in the temperature range o f 295-385 K has been studied as a function of barrier layer thickness (simi lar to 2400-7500 Angstrom) using thermally stimulated discharge current (TS D) technique. TSD spectra of a-Se films show a significant reduction in the charge stored under relaxation peaks upon incorporation of PVK interface l ayer. These results have been attributed to blocking and field enhanced mob ility role of PVK barrier layer film. (C) 1999 American Institute of Physic s. [S0003-6951(99)00631-2].