Localized vibrational modes of carbon-hydrogen complexes in metalorganic ch
emical vapor deposition grown GaN on sapphire were studied using a Fourier-
transform infrared spectroscopy technique. Three distinctive localized vibr
ational modes were observed around 2850, 2922, and 2959 cm(-1) for undoped,
Si-, and Mg-doped samples. These peaks are related to CH, CH2, and CH3 def
ect complexes, respectively. However, the localized vibrational modes were
not observed in some undoped samples, which is indicative of high quality g
rown epitaxial layers. It is also observed that the frequencies and intensi
ties of the localized vibrational modes are sample dependent. (C) 1999 Amer
ican Institute of Physics. [S0003-6951(99)00831-1].