High-resistance buried layers by MeV Fe implantation in n-type InP

We performed 2 MeV Fe implantation at a temperature of 200 degrees C on n-t ype InP substrates with different background doping concentrations. We stud ied the activation of Fe atoms as compensating deep acceptors and the elect rical properties of the implanted layers. Simulation of the current-voltage characteristics coupled with secondary ion mass spectrometry depth profili ng was used to extract important parameters such as the activated Fe fracti on, the resistivity, and the thickness of the compensated layers. Our resul ts show that resistivities of the order of 10(7) Omega cm can also be obtai ned for background doping concentrations higher than 1x10(18) cm(-3), with active Fe concentration well above the known solid solubility limit. (C) 19 99 American Institute of Physics. [S0003-6951(99)02531-0].