Hydrogen cleaning and smoothing of semiconductor surfaces: The case of II-VI compounds

Authors
Picard, E Gentile, P Martrou, D Magnea, N
Citation
E. Picard et al., Hydrogen cleaning and smoothing of semiconductor surfaces: The case of II-VI compounds, APPL PHYS L, 75(5), 1999, pp. 677-679
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
5
Year of publication
1999
Pages
677 - 679
Database
ISI
SICI code
0003-6951(19990802)75:5<677:HCASOS>2.0.ZU;2-6
Abstract
Hydrogen radicals produced by a dc plasma cell have been used for cleaning II-VI semiconductor substrates for molecular beam epitaxy. Surface and chem ical analysis experiments, including scanning tunneling microscopy, show a clear improvement of the chemical purity and morphology of the surface prio r and after epitaxial growth. (C) 1999 American Institute of Physics. [S000 3-6951(99)02931-9].