A phosphorous-rich structure of InP (001) produced by metalorganic vapor-phase epitaxy

A phosphorous-rich structure is generated on the InP (001) surface during m etalorganic vapor-phase epitaxy. It consists of phosphorous dimers, alkyl g roups, and hydrogen atoms adsorbed onto a layer of phosphorous atoms. The a dsorbed dimers produce c(2x2) and p(2x2) domains, with total phosphorous co verages of 2.0 and 1.5 ML. The alkyl groups and hydrogen atoms adsorb onto half of the exposed phosphorous atoms in the first layer. These atoms dimer ize producing a (2x1) structure. It is proposed that the first layer of pho sphorous atoms is the active site for the deposition reaction, and that the organometallic precursors compete with phosphorous dimers, alkyl radicals, and hydrogen for these sites during growth. (C) 1999 American Institute of Physics. [S0003-6951(99)02631-5].