Directed semiconductor growth in nanoporous ceramic films is reported. A p-
n heterojunction with an interface that is spatially distributed across the
complete thickness of the ceramic film is established. The interface area
is estimated to be several 100 times larger than its geometric projection.
The p-n junction shows excellent rectification and may serve as the basic b
uilding block for photovoltaic devices. (C) 1999 American Institute of Phys
ics. [S0003-6951(99)04331-4].