Spatially distributed p-n heterojunction based on nanoporous TiO2 and CuSCN

Citation
C. Rost et al., Spatially distributed p-n heterojunction based on nanoporous TiO2 and CuSCN, APPL PHYS L, 75(5), 1999, pp. 692-694
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
5
Year of publication
1999
Pages
692 - 694
Database
ISI
SICI code
0003-6951(19990802)75:5<692:SDPHBO>2.0.ZU;2-Y
Abstract
Directed semiconductor growth in nanoporous ceramic films is reported. A p- n heterojunction with an interface that is spatially distributed across the complete thickness of the ceramic film is established. The interface area is estimated to be several 100 times larger than its geometric projection. The p-n junction shows excellent rectification and may serve as the basic b uilding block for photovoltaic devices. (C) 1999 American Institute of Phys ics. [S0003-6951(99)04331-4].