Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation

Authors
Roschier, L Penttila, J Martin, M Hakonen, P Paalanen, M Tapper, U Kauppinen, EI Journet, C Bernier, P
Citation
L. Roschier et al., Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation, APPL PHYS L, 75(5), 1999, pp. 728-730
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
5
Year of publication
1999
Pages
728 - 730
Database
ISI
SICI code
0003-6951(19990802)75:5<728:STMOMC>2.0.ZU;2-7
Abstract
We positioned semiconducting multiwalled carbon nanotube, using an atomic f orce microscope, between two gold electrodes at SiO2 surface. Transport mea surements exhibit single-electron effects with a charging energy of 24 K. U sing the Coulomb staircase model, the capacitances and resistances between the tube and the electrodes can be characterized in detail. (C) 1999 Americ an Institute of Physics. [S0003-6951(99)00131-X].