Properties of [Mg-2(thd)(4)] as a precursor for atomic layer deposition ofMgO thin films and crystal structures of [Mg-2(thd)(4)] and [Mg(thd)(2)(EtOH)(2)]

Citation
T. Hatanpaa et al., Properties of [Mg-2(thd)(4)] as a precursor for atomic layer deposition ofMgO thin films and crystal structures of [Mg-2(thd)(4)] and [Mg(thd)(2)(EtOH)(2)], CHEM MATER, 11(7), 1999, pp. 1846-1852
Citations number
43
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CHEMISTRY OF MATERIALS
ISSN journal
08974756 → ACNP
Volume
11
Issue
7
Year of publication
1999
Pages
1846 - 1852
Database
ISI
SICI code
0897-4756(199907)11:7<1846:PO[AAP>2.0.ZU;2-M
Abstract
Complexes [Mg-2(thd)(4)] (1) and [Mg(thd)(2)(EtOH)(2)] (2) (Hthd = 2,2,6,6- tetramethyl-3,5-heptanedione) were prepared and characterized using various techniques, viz. X-ray diffraction, NMR and mass spectroscopy, and thermal analysis, Crystal structures of compounds 1 and 2 were determined. Complex 1 crystallizes as a dimer where three oxygen atoms from three different th d ligands join the Mg atoms together, Crystallization from ethanol results in a monomeric complex having solvent coordinated to Mg. Both complexes vol atilize completely, but in a, coordinated ethanol molecules do not stay int act in the gas phase. Complex 1 was used with H2O2 as precursors in the gro wth of MgO thin films by atomic layer deposition techniques. A rather const ant growth rate of 0.10-0.14 Angstrom/cycle was observed at 325-425 degrees C.