ATOMIC MIGRATION AND DEFECT CONCENTRATION AND STRUCTURE CHANGES DUE TO ELECTRONIC SUBSYSTEM EXCITATIONS IN A SEMICONDUCTOR

Exciting the electronic subsystem of a semiconductor via ionization (p hotoionization) by charged particles or, alternatively, injecting none quilibrium charge carriers into the semiconductor stimulate atomic mig ration and add new structural defects as well as modifying the nature of those present. These effects change the major electrical and physic al parameters of semiconductors, in particular of those crucial for mo dern solid state electronics. The current data on the subject are pres ented and discussed.