Modulation of visible light by AlAs-AlGaAs multiple-quantum-well p-i-n structures

Citation
M. Shishkov et al., Modulation of visible light by AlAs-AlGaAs multiple-quantum-well p-i-n structures, IEEE J Q EL, 35(8), 1999, pp. 1176-1179
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF QUANTUM ELECTRONICS
ISSN journal
00189197 → ACNP
Volume
35
Issue
8
Year of publication
1999
Pages
1176 - 1179
Database
ISI
SICI code
0018-9197(199908)35:8<1176:MOVLBA>2.0.ZU;2-M
Abstract
We report measurements on the modulation of visible light by a multiple-qua ntum-well (MQW) modulator designed for normal incidence, The MQW structure is composed of AlAs-AlxGa1-xAs with an Al concentration x = 0.41. The struc ture exhibits an exciton absorption peak at 608 nm in the visible part of t he spectrum. The phase and amplitude modulation properties of this structur e were studied using a Michelson interferometer that employed a novel doubl e lock-in detection technique. Phase and amplitude modulation were studied as a function of the wavelength to determine their maxima. In our structure , phase modulation up to 20 degrees and amplitude modulation up to 8% were observed. These values are comparable to what is typically achieved by usin g waveguide geometry.