Linearity and third-order intermodulation distortion in DFB semiconductor lasers

Citation
Jy. Chen et al., Linearity and third-order intermodulation distortion in DFB semiconductor lasers, IEEE J Q EL, 35(8), 1999, pp. 1231-1237
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF QUANTUM ELECTRONICS
ISSN journal
00189197 → ACNP
Volume
35
Issue
8
Year of publication
1999
Pages
1231 - 1237
Database
ISI
SICI code
0018-9197(199908)35:8<1231:LATIDI>2.0.ZU;2-T
Abstract
This paper presents a systematic investigation of the third-order intermodu lation distortion characteristics in distributed feedback (DFB) semiconduct or lasers. The influence of several nonlinearities, such as longitudinal sp atial hole burning, gain compression, and relaxation oscillation, is consid ered. Detailed analysis shows that it is possible to make different nonline arities cancel one another to give a low intermodulation distortion by choo sing the appropriate DFB structure and facet conditions. Specifically, cond itions for cancellation between spatial hole burning and gain compression n onlinearities are introduced.