Spontaneous emission and threshold characteristics of 1.3-mu m InGaAs-GaAsquantum-dot GaAs-based lasers

Authors
Deppe, DG Huffaker, DL Csutak, S Zou, Z Park, G Shchekin, OB
Citation
Dg. Deppe et al., Spontaneous emission and threshold characteristics of 1.3-mu m InGaAs-GaAsquantum-dot GaAs-based lasers, IEEE J Q EL, 35(8), 1999, pp. 1238-1246
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF QUANTUM ELECTRONICS
ISSN journal
00189197 → ACNP
Volume
35
Issue
8
Year of publication
1999
Pages
1238 - 1246
Database
ISI
SICI code
0018-9197(199908)35:8<1238:SEATCO>2.0.ZU;2-9
Abstract
The spontaneous emission spectra and lasing characteristics of long-wavelen gth (13-mu m) quantum-dot lasers are studied. It is found experimentally th at nonradiative recombination can dominate the room-temperature efficiency and limit threshold. By describing the quantum-dot spectral emission as due to energy levels of a two-dimensional harmonic oscillator, rate equations are developed to account for the temperature-dependent spontaneous and lasi ng characteristics.